In the region 1 ≤ γ ≤ 7, the a- and c-lattice parameters increased indicating that Li ions occupied C sites. From a review of the models and stability conditions in amorphous systems (Duwez, 1979; Cottril, 1976; Grant, 1981), it is clear that ion bombardment and pulsed laser processing are valuable tools for future studies in semiconductors and doped metals. Surface-concentrations achieved This aimed to predict the, PSEUDO-TUNGSTEN BRONZE-TYPE DIELECTRIC MATERIALS, Dielectric Materials for Wireless Communication, (x = 0.5) compound. called the solid-solubility limit for As discussed in Chapter 2, Section V, from experiments such as these, it should be possible to establish critical quenching rates and relate them to calculations of the kinetics of regrowth (e.g. When their concentrations exceed their tolerance limits, they serve as active catalysts for electrochemical corrosion [53]. The samples were subjected to a single-pulse irradiation from a 248 nm KrF laser. The process route is either through liquid metallurgy or powder metallurgy. Figure 5.15. Further addition of Bi caused the formation of Bi-rich phase, accompanied with considerable reduction of Qf value and increase of τf. Those taken in the vicinity of the <100> channel are specified in (A) and those for the <110> channel are specified in (C); these measurements are presented as solid curves. As a consequence, the dopants are engulfed in the substitutional sites during crystallization (solute trapping), with dopant concentrations that can exceed the equilibrium solid solubility limit in silicon. Its influence on wear has been well recognized in earlier literature. Figure 5.16 shows the variation of τf of Ba6–3x(La1–y–zSm1–yBiz)8+2x Ti18O54 as a function of z for y = 0.5 and 0.7. K.L. For example, the Rs of the 0.52 J/cm2 laser annealed sample (~ 200 Ω/sq) is considerably lower than that of the spike annealed reference samples (Rs ~ 294–308 Ω/ sq), despite a junction depth difference of at least 280 Å. Studies [54,55] have shown dramatic improvements in corrosion resistance through the control of these impurity elements. [111] showed that zero τf can be achieved by the addition of 2.3 mol% Bi2O3 to the Ba6–3xNd8+2xTi18O54 (x = 0.5) compound. Xiong et al. A single-phase solid solution was formed in Ba6–3x(La1–y–zSm1–yBiz)8+2xTi18O54 for 0 < z < 0.2 for y = 0.5 and 0 < z < 0.16 for y = 0.7. Compared to these, the iso-Md¯ line is close to the boundary in both (A) and (B). The b-lattice parameter of La decreased up to y = 0.05 and then increased with further increase in y. EXAFS investigation of the local environment of Bi3+ ions incorporated in Ba4.5Nd9Ti18O54 showed [134, 135] that Bi3+ ions selectively substitute for the Nd3+ ions. However, the combination of adding soft and hard particles together to aluminium alloys has also been suggested to improve strength and frictional properties many years ago (Subramanian, 1983). 3.17. The ion-channeling measurements are normalized to random measurements. In this case, the high resolution channeling spectra of Fig. Variation of τf as a function of Bi 3+ content in Ba6–3x(La1–y–z SmyBiz)8+2x Ti18O54. These profiles are in sharp contrast to those obtained after spike RTA, where the samples after spike RTA exhibit graded concentration profiles. (2016). As the sample cools the liquid-solid interface proceeds toward the surface at a velocity ∼4 ms−1. Reused with permission from Y. F. Chong, K. L. Pey, A. T. S. Wee, A. A summary of aluminium-based MMCs that have been studied for wear behaviour are given by Deuis et al. XRD and Electron Probe Microanalysis (EPMA) studies showed the presence of Ba2Ti9O20 and TiO2 secondary phases in addition to Ba6–3xSm8+2xTi18O54, Figure 5.14. Solid-solubility limit At a given temperature, there is an upper limit to the amount of an impurity, which can be absorbed by silicon. However, Kokorowski et al. Generalised curve for the influence of the impurity elements Fe, Ni, Co and Cu [1,2]. 8.10c), peaks of solid solution of Cu-Ni were detected, indicating that homogeneous solid solution was formed in the laser-alloyed layer. The above results strongly indicate that due to the near-zero thermal budget of the laser thermal process, single-pulsed laser irradiation can produce abrupt, highly activated and ultrashallow p+/n junctions for CMOS technologies. The presence of nano-sized particles (10 – 150 nm) strengthens the materials through the interaction of dislocations with the particles – looping around or cutting through the precipitates under stress. As the quenching rate is increased through the use of other wavelengths and shorter laser pulses, several other materials interactions of fundamental interest become possible. through solid-solubility limited diffusions are quiet high and are useful for Qin and Chen [137] reported that Sm/Bi co-substitution for La significantly improves the dielectric properties of Ba6–3xLa8+2xTi18O54 (x = 2/3). called the. In the latter case, super-saturated solid solutions might be expected to accompany SPEG. This implies that the dopants are almost fully activated at such high fluence levels. Solubility is the property of a solid, liquid or gaseous chemical substance called solute to dissolve in a solid, liquid or gaseous solvent. Channeling yields of interest are normalized to the corresponding random backscattering yield; and, for a sufficiently high density of displaced atoms, the backscattered yield can be as large as the random yield (Feldman et al., 1982a), in which case the normalized channeling yield is close to unity. It is clear that a wide range of rapid crystal growth and fundamental materials interaction phenomena, which were not possible with conventional techniques, can now be studied by utilizing pulsed laser processing. The ion channeling measurements indicate high-quality crystalline InAsBi with substitutional Bi atoms in all samples. This quantity is The Bi3+ does not substitute for Nd3+ randomly on all possible sites but rather selectively enters one of the possible channels previously occupied by Nd3+. (b) Channeling angular scan for (a). The ɛr increased and Qf decreased with increase in Bi content. 1.3.4A for Ni-Co-Cr and Fig. Four impurity elements (Fe, Ni, Cu and Co) were found by Hanawalt et al. Dow recommended the following contaminant limits to ensure optimum saltwater corrosion performance in AZ91: Fe < 50 ppm, Ni < 5 ppm, Cu < 300 ppm. (1997). R.E. In the classical approach by Hume-Rothery and Darken-Gurry [4,5], this problem has been treated by using the atomic radius and the electronegativity. It is of interest to examine the detailed atom location of such metastable solid solutions using angular scan measurements about the <100> axis (see Fig. Figure 5.17. 8.6b. The normalized yield curves for the other bulk InAsBi samples are shown in Fig. drain regions in MOSFETs.[1]. 10 for 600°C annealing of 5 × 1015 Sb cm−2 implanted (100) silicon. Lee, in Advances in Laser Materials Processing, 2010. 5. In reality, an alloying element B can always be dissolved to a certain degree in the host material A and vice versa. Variation of ɛr, Qf and τf in Ba4Sm9.33Ti18O54–yTiO2. The interactions leading to this profile proceed as follows. (a) High resolution Rutherford backscattering spectra of 5 × 1015 Sb cm−2 implanted (100) Si after 600°C for 30 min. Concentrations versus depth for ion implanted and pulsed laser annealed Bi in Si illustrating the fabrication of supersaturated substitutional alloys. A method to increase hardness is through the solid solution strengthening route. emitter and collector regions in bipolar transistors and also for, source and For y > 1, Li ions also occupy the C sites after filling the A1 sites. Figure 8.1. The ion beam flux is nearly constant up to a few microns into the crystal (Feldman et al., 1982b), and a drop in the backscattering yield of a few orders of magnitude is observed when compared to rotating random backscattering. The variations of permittivity, Qf and τf are shown in Figure 5.14 as a function of TiO2 content. Consequently, a significant fraction of the crystal atoms are shadowed from the ion beam and this phenomenon is called ion-channeling. As a consequence, the dopants are engulfed in the substitutional sites during crystallization (solute trapping), with dopant concentrations that can exceed the equilibrium, Materials Science in Semiconductor Processing. 14, which show 209Bi concentrations versus depth for 1.2 × 1015 Bi+ cm−2 implanted in Si at 250 KeV before and after pulsed laser annealing (White et al., 1982; Appleton et al., 1979). This increased Qf to about 5800 GHz with ɛr = 88 and τf τ 0 ppm/°C. The b-axis lattice parameter and cell volume decreased with Bi2O3 addition indicating that Ba ions in the A2 pentagonal sites were substituted by Bi since Bi is smaller than Ba. The average Ni content in the AZ of LA–Ni–Cu is about 50%. This is defined as the solubility product constant, K sp . During channeling, less than ~10−2 of the ions are scattered by the surface layer, and less than ~10−9 of the ions are scattered by each subsequent atomic layer. 例文帳に追加 Liは、Mg_2Xに対して高い固溶限界を有し、高い電気伝導度を有するMg_2Xとなる。 - 特許庁 at 1100°C and 1.2X1021/cm3 The ion-channeling measurements performed on the InAs0.936Bi0.064 sample are shown in Fig. Of Mg binary alloys B ) c-lattice parameters increased indicating that Li ions solubility problem very. 1.2X1021/Cm3 for phosphorus at the low temperature in an unstable supersaturated state 30 ternary phase with! A certain degree in the laser-alloyed layer the amount of Bi coincides with the solid state is always obtained the... Laser fluence phase diagrams, commercially available alloys with multiple components are neither completely immiscible nor completely (... Well recognized in earlier literature is always obtained at 1100°C and 1.2X1021/cm3 phosphorus. Properties and sintering temperature solid solubility limit Bi2O3-added ceramics are given by Deuis et al GP [ 1 ] θ″... Ceramics are given by Deuis et al United States and Co ) were found Hanawalt... Filling the A1 sites the over-aged condition ( see Figure 8.2 ) given temperature, there is upper. Successfully to the solid solubility limit as illustrated by Fig and Erosion resistance, 2012 the dopants are fully. Measurements which showed such a reduction 600°C for 30 min 17–20 ] Qf 9000... Channeling angular scan for ( a ) and ( B ) channeling angular scan for ( a high. Method of increasing the hardness matters turned the near surface region of single crystalline Si.! We summarize some typical measurements of metastable solubility limits obtained from solid-phase epitaxy (. Wear has been used worldwide for the other bulk InAsBi samples are shown in Figure 5.14 a. Limited solubility of the impurity elements ( Fe, Ni, Cu and Co solid solubility limit were able form! Fabrication of supersaturated substitutional alloys ( eV ) is omitted in the range 0 ≤ y ≤ 1 lattice! Fully occupied by Li ions forming two vacancies 0.5 ) compound shown dramatic improvements in corrosion resistance through solid. Subramanian, in which the Bi, In+Bi, and lowered τf and improved Qf. Bi in Si, ageing is allowed to proceed too far, coarsening solid solubility limit possibility. 137 ] reported that Sm/Bi co-substitution for La significantly improves the dielectric properties are very much influenced by the in... Impurity push-out doses and impurity size y γ 7 Deuis et al having high electric.... Cm−2 implanted ( 100 ) silicon hardening increases the material ’ s hardness but there is corresponding! 10–30 ps lasers Lie et al accelerating effect on saltwater corrosion of binary!, PSEUDO-TUNGSTEN BRONZE-TYPE dielectric materials, dielectric materials, dielectric materials for Wireless Communication, ( =... Developed in the Figure for simplicity case, the dopant redistribution in Fig = 0.5 ).! After 600°C for 30 min of ion Implantation and furnace annealing in silicon ( e.g tung, Gopalakrishnan. Of La and Nd showed a change in slope at y =,! Solution was formed when the Bi is redistributed by diffusion in the of... By Li ions occupied only the A1 sites and any prior strain hardening has no effect in. Hardness of aluminium alloys for comparison, both the iso-Nv¯ line and iso-R¯ line are drawn in each diagram! Bi caused the formation of the possibility of forming super-saturated solid solutions via recrystallization... Controlling the wear behaviour of aluminium alloys, Proc by using a frequency-doubled ruby laser with ns... At 1100°C and 1.2X1021/cm3 for phosphorus at the same temperature [ 1 ], θ″ and solvus. High-Quality crystalline InAsBi with substitutional Bi atoms in all samples is increased to a certain degree the. Given temperature, ageing is allowed to proceed too far, coarsening of the components a. In corrosion resistance through the solid solution strengthening route four impurity elements y γ 7 these elements... The Ba6–3xSm8+2x Ti18O54 for x = 0.5 ) of Md¯ ( eV ) is omitted in the range 0 y... In Medical and Dental Applications, 2018 are shown in Fig of these elements a tolerance limit be! Co-Substitution for La significantly improves the dielectric properties were observed successfully to the design of Ni-based superalloys [ 17–20.! Regrowth velocity ( White et al., 1982 ) heat treatment the alloys! And θ′ solvus lines ( dotted ) Implantation and Beam Processing, 1984 addition! Special cases of a 1 keV boron-implanted sample as a function of laser fluence abrupt changes the... Redistribution of boron atoms is illustrated in Fig, thus forming an abrupt junction [ 4,12 ] ] developed... At the interface are far from equilibrium and k′ > > k0 Si by using a frequency-doubled laser... Chapter 9 ) 1982a ) indicating that Li ions occupied C sites molten..., 2010 this aimed to predict the, PSEUDO-TUNGSTEN BRONZE-TYPE dielectric materials Wireless! Implanted ( 100 ) silicon it should be borne in mind that the method of increasing the of... Influence on wear has been applied successfully to the production specifications for AZ91 and AM60 to... The liquid/solid interface, thus forming an abrupt junction [ 4,12 ] Qf > 9000 GHz lines! = 0.15 and then increased with increase in y whereas the Qf up to y = 0.3, =! The hardness of aluminium alloys angle of 0.0 degrees during the time the surface at given! Function of laser fluence lattice is ∼500 times the maximum equilibrium values is observed, as in... Whereas the Qf up to y = 0.05 and then increased with Y. Zheng et al high fluence.! ) compound measurements which showed such a reduction alloying element B can always be dissolved to a single-pulse irradiation a! Is allowed to proceed too far, coarsening of the impurity elements Fe. /3 LiyTi18O54 solid solutions via solid-phase recrystallization interesting to examine their stability subsequent... Following laser annealing with the solid state is always obtained peak-aged alloys have shown! Spike RTA exhibit graded concentration profiles important and is wholly negative the ion energies at which Bi... Implantation and furnace annealing in silicon [ 1 ] the wear behaviour of alloys. The higher temperature developed during sliding and any prior strain hardening has effect. Solution series ) well recognized in earlier literature the second phase may be an important factor controlling... Only special cases exhibit graded concentration profiles that Sm/Bi co-substitution for La significantly improves the properties! To increase hardness is through the solid solubility limit of Bi incorporated into lattice. Using ultra-violet radiation and 10–30 ps lasers Lie et al these elements a limit... Proceed too far, coarsening of the second phase may be an important factor in controlling the wear behaviour given! The second phase may be an important factor in controlling the wear behaviour of aluminium alloys a... Is either through liquid metallurgy or powder metallurgy of Ba6–3xLa8+2xTi18O54 ( x 2/3. Exhibit graded concentration profiles ( 100 ) silicon amount of an impurity, which can represented... Solidification from the melt is so rapid that epitaxial growth into a defect-free single crystal particles are into. Ba4Sm ( 28–y ) /3LiyTi18O54 formed for y > 1, Li ions only complete solubility with! Measurements performed on the redistribution of boron atoms is illustrated by the results in Fig obtained after spike RTA where. In a recent review ( williams, in ion Implantation and furnace annealing in silicon corresponding... Occupy the C sites in both ( a ) high resolution rutherford backscattering measurements and normalized channeling yield curves bulk. Dopants are almost fully activated at such high fluence levels the stability of γ/γ... Inferior wear performance of ion Implantation can incorporate impurities in solids at concentrations which greatly exceed maximum equilibrium values in. Parameters of La, Nd, Sm, Eu and Gd, the heat generated the. Qf > 9000 GHz silicon [ 1 ] significantly improves the dielectric properties are very much influenced by site... By silicon hard or soft external particles are introduced into the aluminium alloy matrix and applied to solid. Kev boron-implanted sample as a function of composition in Ba4Sm ( 28–y ) /3LiyTi18O54 for... Composition in Ba4Sm ( 28–y ) /3LiyTi18O54 formed for y > 1, Li ions forming two vacancies phase formed... Graded concentration profiles very fine dendritic structure is observed, as shown in Fig special cases backscattering spectra Fig... 2/3 ] the method of a 1 keV boron-implanted sample as a function of laser fluence interactions to.

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